KEC KRC110S-RTK/P

KEC · Transistors (BJTs) · MPN KRC110S-RTK/P

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor6.11kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

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