KEC 2N5401S-RTK/P

KEC · Transistors (BJTs) · MPN 2N5401S-RTK/P

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23

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