JTD · Transistors (BJTs) · MPN JTDMMDT5401DW
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 150V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 200mW |
| Configuration | - |
| Number | 2 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP+PNP 150V 200mA 100MHz 200mW Surface Mount SOT-363