JTD JTDMMDT3906DW

JTD · Transistors (BJTs) · MPN JTDMMDT3906DW

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Configuration-
Number2 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP+PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363

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