JTD · Transistors (BJTs) · MPN JTDMMBT3906W
No reviews yet — be the first to review JTD JTDMMBT3906W.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 40V |
| DC Current Gain | 80 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 200mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
40V 80 1 PNP PNP 200mA SOT-323 Single Bipolar Transistors RoHS