JTD · Transistors (BJTs) · MPN JTDBC857BW
No reviews yet — be the first to review JTD JTDBC857BW.
| Current - Collector Cutoff | 15nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 65V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 220 |
| Pd - Power Dissipation | 150mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 1.1V |
| Operating Temperature | -55℃~+150℃ |
65V 220 1 PNP PNP 100mA SOT-323 Single Bipolar Transistors RoHS