JTD · Transistors (BJTs) · MPN JTD3906
No reviews yet — be the first to review JTD JTD3906.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 40V |
| DC Current Gain | 300 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 200mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
40V 300 1 PNP PNP 200mA SOT-23 Single Bipolar Transistors RoHS