JSMSEMI TIP35C-JSM

JSMSEMI · Transistors (BJTs) · MPN TIP35C-JSM

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain15
Pd - Power Dissipation125W
Number1 NPN
typeNPN
Current - Collector(Ic)25A
Vce Saturation(VCE(sat))4V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Through Hole TO-247

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