JSMSEMI S9014

JSMSEMI · Transistors (BJTs) · MPN S9014

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain1000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 25V 100mA 150MHz 200mW Surface Mount SOT-23

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