JSMSEMI PUMH11,115-JSM

JSMSEMI · Transistors (BJTs) · MPN PUMH11,115-JSM

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain30
Emitter-Base Voltage VEBO-
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation150mW

Technical details

50V 30 100mA 150mW 2 NPN (Pre-Biased) NPN SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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