JSMSEMI PUMH10-JSM

JSMSEMI · Transistors (BJTs) · MPN PUMH10-JSM

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain-
Emitter-Base Voltage VEBO-
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor2.86kΩ
Resistor Ratio26
Pd - Power Dissipation-

Technical details

50V 100mA 2 NPN (Pre-Biased) NPN SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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