JSMSEMI · Transistors (BJTs) · MPN PUMD3,115-JSM
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | - |
| DC Current Gain | 60 |
| Emitter-Base Voltage VEBO | - |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
| Output Voltage(VO(on)) | - |
| Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 385mW |
50V 60 100mA 385mW NPN+PNP 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Single, Pre-Biased Bipolar Transistors RoHS