JSMSEMI · Transistors (BJTs) · MPN PDTD113ZT,215-JSM
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| Current - Collector Cutoff | 500nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | 200MHz |
| DC Current Gain | 82 |
| Emitter-Base Voltage VEBO | - |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Vce Saturation(VCE(sat)) | 300mV@50mA,2.5mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 1.3kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 200mW |
50V 82 500mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS