JSMSEMI · Transistors (BJTs) · MPN PDTC123JT,215-JSM
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 80 |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 250mV |
| Output Voltage(VO(on)) | - |
| Input Resistor | 28.6kΩ |
| Resistor Ratio | - |
| Pd - Power Dissipation | 200mW |
50V 80 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS