JSMSEMI PBSS8110Z,135-JSM

JSMSEMI · Transistors (BJTs) · MPN PBSS8110Z,135-JSM

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Specifications

Current - Collector Cutoff120nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain250
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

80V 250 1 NPN NPN 1A SOT-223 Single Bipolar Transistors RoHS

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