JSMSEMI · Transistors (BJTs) · MPN PBSS4350Z-JSM
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| Current - Collector Cutoff | 100nA;50uA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 300mW;480mW;540mW;1.2W |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 80mV;160mV;280mV;260mV;370mV |
50V 300 NPN 1 NPN 3A Single Bipolar Transistors RoHS