JSMSEMI MJE700T-JSM

JSMSEMI · Transistors (BJTs) · MPN MJE700T-JSM

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Specifications

Current - Collector Cutoff100uA;500uA
Vbe Saturation(VBE(sat))-
Vbe On(VBE(on))2.5V;3V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain750;100
Pd - Power Dissipation40W
type-
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))2.5V;3V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 60V 4A 40W Through Hole TO-126

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