JSMSEMI MJE340G

JSMSEMI · Transistors (BJTs) · MPN MJE340G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO3V
DC Current Gain240
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 20W Through Hole TO-126

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