JSMSEMI · Transistors (BJTs) · MPN MJD45H11T4G
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 40MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 50W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 8A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor PNP 80V 8A 40MHz 50W Surface Mount TO-252