JSMSEMI MJ15022G-JSM

JSMSEMI · Transistors (BJTs) · MPN MJ15022G-JSM

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO200V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation250W
Number1 NPN
typeNPN
Current - Collector(Ic)16A
Operating Temperature-
Vce Saturation(VCE(sat))4V

Technical details

Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-3

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