JSMSEMI · Transistors (BJTs) · MPN KSE350G-JSM
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 300V |
| Emitter-Base Voltage VEBO | 3V |
| DC Current Gain | 240 |
| Pd - Power Dissipation | 20W |
| Configuration | - |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 300V 0.5A 20W Through Hole TO-126F