JSMSEMI BC817DPN,115-JSM

JSMSEMI · Transistors (BJTs) · MPN BC817DPN,115-JSM

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz;80MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW;200mW
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA;500mA
Vce Saturation(VCE(sat))700mV

Technical details

45V 400 NPN+PNP 1 NPN + 1 PNP SOT-23-6L Single Bipolar Transistors RoHS

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