JSMSEMI · Transistors (BJTs) · MPN 2SD667A
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 320 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 900mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 100V 600mA 140MHz 900mW Through Hole TO-92L