JSMSEMI 2SC3357-T1-A

JSMSEMI · Transistors (BJTs) · MPN 2SC3357-T1-A

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)7GHz
Collector - Emitter Voltage VCEO10V
Emitter-Base Voltage VEBO3V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))400mV

Technical details

10V 400 1 NPN NPN 100mA SOT-89 Single Bipolar Transistors RoHS

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