JSMSEMI · Transistors (BJTs) · MPN 2SC3356-R25
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 7GHz |
| Collector - Emitter Voltage VCEO | 12V |
| Emitter-Base Voltage VEBO | 3V |
| DC Current Gain | 125 |
| Pd - Power Dissipation | 200mW |
| Configuration | Standalone |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
Bipolar (BJT) Transistor 12V 100mA 7GHz 200mW Surface Mount SOT-23