JSMSEMI 2SB1386-JSM

JSMSEMI · Transistors (BJTs) · MPN 2SB1386-JSM

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain390
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 20V 5A 120MHz 0.5W Surface Mount SOT-89

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