JSMSEMI 2SA1797T100Q-JSM

JSMSEMI · Transistors (BJTs) · MPN 2SA1797T100Q-JSM

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain82
Pd - Power Dissipation500mW
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))350mV

Technical details

Bipolar (BJT) Transistor PNP 50V 3A 200MHz 0.5W Surface Mount SOT-89

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