JSMSEMI · Transistors (BJTs) · MPN 2N5401
No reviews yet — be the first to review JSMSEMI 2N5401.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 150V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 150 |
| Pd - Power Dissipation | 625mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 600mA |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP 150V 0.6A 300MHz 0.625W Through Hole TO-92