JSCJ UMZ1N

JSCJ · Transistors (BJTs) · MPN UMZ1N

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation150mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 50V 0.15A 180MHz 0.15W Surface Mount SOT-363

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