JSCJ UMT1N

JSCJ · Transistors (BJTs) · MPN UMT1N

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain560
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation150mW
Configuration-
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

50V 560 PNP 2 PNP 150mA SOT-363 Single Bipolar Transistors RoHS

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