JSCJ UMH3N

JSCJ · Transistors (BJTs) · MPN UMH3N

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor6.11kΩ
typeNPN
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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