JSCJ UMH2N

JSCJ · Transistors (BJTs) · MPN UMH2N

No reviews yet — be the first to review JSCJ UMH2N.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor61.1kΩ
Number2 NPN (Pre-Biased)
typeNPN
Resistor Ratio1.2
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

Related Transistors (BJTs)