JSCJ UMH10N

JSCJ · Transistors (BJTs) · MPN UMH10N

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor2.86kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio26
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)1.1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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