JSCJ · Transistors (BJTs) · MPN UMG8N
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| Transition frequency(fT) | 250MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 80 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 6.11kΩ |
| type | NPN |
| Resistor Ratio | 12 |
| Number | 2 NPN Pre-Biased (Emitter-Coupled) |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353