JSCJ TIP122

JSCJ · Transistors (BJTs) · MPN TIP122

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Specifications

Vbe Saturation(VBE(sat))-
Current - Collector Cutoff200uA
Vbe On(VBE(on))-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain12000
Pd - Power Dissipation1.25W
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))4V@5A,20mA

Technical details

100V 12000 NPN 5A TO-126 Single Bipolar Transistors RoHS

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