JSCJ MPSH10

JSCJ · Transistors (BJTs) · MPN MPSH10

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)650MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO3V
DC Current Gain60
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)40mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 25V 40mA 650MHz 350mW Through Hole TO-92

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