JSCJ MMDT5551(RANGE:100-300)

JSCJ · Transistors (BJTs) · MPN MMDT5551(RANGE:100-300)

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation200mW
Number2 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 160V 0.2A 300MHz 0.2W Surface Mount SOT-363

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