JSCJ MJD122

JSCJ · Transistors (BJTs) · MPN MJD122

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Specifications

Current - Collector Cutoff10uA
Vbe Saturation(VBE(sat))4.5V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain12000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))4V@8A,80mA

Technical details

100V 12000 NPN 8A TO-252-2L Single Bipolar Transistors RoHS

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