JSCJ MJD117

JSCJ · Transistors (BJTs) · MPN MJD117

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)25MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain500
Pd - Power Dissipation1.75W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 100V 2A 25MHz 1.75W Surface Mount TO-252-2L

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