JSCJ MJD112

JSCJ · Transistors (BJTs) · MPN MJD112

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)25MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain12000
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V@4A,40mA

Technical details

100V 12000 NPN 2A TO-252-2L Single Bipolar Transistors RoHS

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