JSCJ KTC3199

JSCJ · Transistors (BJTs) · MPN KTC3199

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain70
Pd - Power Dissipation400mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 0.15A 80MHz 400mW Through Hole TO-92S

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