JSCJ KSA1182

JSCJ · Transistors (BJTs) · MPN KSA1182

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain240
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 0.5A 200MHz 150mW Surface Mount SOT-23

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