JSCJ EMH9

JSCJ · Transistors (BJTs) · MPN EMH9

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor13kΩ
Number2 NPN (Pre-Biased)
typeNPN
Resistor Ratio5.7
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563

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