JSCJ · Transistors (BJTs) · MPN EMD22
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 80 |
| Pd - Power Dissipation | 150mW |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 6.11kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Resistor Ratio | 12 |
| type | NPN+PNP |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Current - Collector(Ic) | 100mA |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Operating Temperature | -55℃~+150℃ |
80 1 NPN Pre-Biased, 1 PNP Pre-Biased NPN+PNP 100mA SOT-563 Single Bipolar Transistors RoHS