JSCJ EMD22

JSCJ · Transistors (BJTs) · MPN EMD22

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Pd - Power Dissipation150mW
Output Voltage(VO(on))300mV
Input Resistor6.11kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio12
typeNPN+PNP
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.3V
Operating Temperature-55℃~+150℃

Technical details

80 1 NPN Pre-Biased, 1 PNP Pre-Biased NPN+PNP 100mA SOT-563 Single Bipolar Transistors RoHS

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