JSCJ DTC114TM

JSCJ · Transistors (BJTs) · MPN DTC114TM

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain600
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Input Resistor13kΩ
Number1 NPN (Pre-Biased)
typeNPN
Pd - Power Dissipation100mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 100mW Surface Mount SOT-723

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