JSCJ DTC114TE

JSCJ · Transistors (BJTs) · MPN DTC114TE

No reviews yet — be the first to review JSCJ DTC114TE.

Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation150mW
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

50V 100 1 NPN (Pre-Biased) NPN 100mA SOT-523 Single Bipolar Transistors RoHS

Related Transistors (BJTs)