JSCJ BD442

JSCJ · Transistors (BJTs) · MPN BD442

No reviews yet — be the first to review JSCJ BD442.

Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain475
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.25W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor PNP 80V 4A 3MHz 1.25W Through Hole TO-126

Related Transistors (BJTs)