JSCJ BD435

JSCJ · Transistors (BJTs) · MPN BD435

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain85
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 32V 4A 3MHz 1.25W Through Hole TO-126

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