JSCJ BD139-16

JSCJ · Transistors (BJTs) · MPN BD139-16

No reviews yet — be the first to review JSCJ BD139-16.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126

Related Transistors (BJTs)