JSCJ BC556

JSCJ · Transistors (BJTs) · MPN BC556

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation625mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 0.1A 625mW Through Hole TO-92

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